RF/analog Performance Assessment of High Frequency, Low Power In0.3Al0.7As/InAs/InSb/In0.3Al0.7As HEMT Under High Temperature Effect

被引：0

作者：

Khaouani, M. ^{[1
]}

Bencherif, H. ^{[2
]}

Hamdoune, A. ^{[1
]}

Belarbi, A. ^{[3
]}

Kourdi, Z. ^{[3
]}

机构：

[1] Univ Aboubek Belkaid, Dept Genie Elect & Elect, Unit Res Mat & Renewable Energies, Tilimsen, Algeria

[2] Univ Batna 2, LAAAS Lab, Batna, Algeria

[3] Algeria Space Agcy, Ctr Exploitat Telecommun Satellite Oran Alger, Algiers, Algeria

来源：

TRANSACTIONS ON ELECTRICAL AND ELECTRONIC MATERIALS | 2021年 / 22卷 / 04期

关键词：

pHEMT; Temperature effect; RF; analog performance; Numerical simulation; ELECTRON-MOBILITY TRANSISTORS; GATE LENGTH; LOW-NOISE; ENHANCEMENT; TECHNOLOGY; IONIZATION; ALSB/INAS; VOLTAGE; MOSFETS; IMPACT;

D O I：

10.1007/s42341-020-00250-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper, we performed a Pseudo-morphic High Electron Mobility Transistors (pHEMT) In0.3Al0.7As/InAs/InSb/In0.3Al0.7 using Silvaco-TCAD. RF and analog electrical characteristics are assessed under high temperature effect. The impact of the temperature is evaluated referring to a device at room temperature. In particular, the threshold voltage (V-th), transconductance (g(m)), and I-on/I-off ratio are calculated in the temperature range of 300 K to 700 K. The primary device exhibits a drain current of 950 mA, a threshold voltage of -1.75 V, a high value of transconductance g(m) of 650 mS/mm, I-on/I-off ratio of 1 x 10(6), a transition frequency (f(t)) of 790 GHz, and a maximum frequency (f(max)) of 1.4 THZ. The achieved results show that increasing temperature act to decrease current, reduce g(m), and I-on/I-off ratio. In more detail high temperature causes a phonon scattering mechanism happening that determine in turn a reduced drain current and shift positively the threshold voltage resulting in hindering the device DC/AC capability.

引用

页码：459 / 466

页数：8