RF/analog Performance Assessment of High Frequency, Low Power In0.3Al0.7As/InAs/InSb/In0.3Al0.7As HEMT Under High Temperature Effect

In this paper, we performed a Pseudo-morphic High Electron Mobility Transistors (pHEMT) In0.3Al0.7As/InAs/InSb/In0.3Al0.7 using Silvaco-TCAD. RF and analog electrical characteristics are assessed under high temperature effect. The impact of the temperature is evaluated referring to a device at room temperature. In particular, the threshold voltage (V-th), transconductance (g(m)), and I-on/I-off ratio are calculated in the temperature range of 300 K to 700 K. The primary device exhibits a drain current of 950 mA, a threshold voltage of -1.75 V, a high value of transconductance g(m) of 650 mS/mm, I-on/I-off ratio of 1 x 10(6), a transition frequency (f(t)) of 790 GHz, and a maximum frequency (f(max)) of 1.4 THZ. The achieved results show that increasing temperature act to decrease current, reduce g(m), and I-on/I-off ratio. In more detail high temperature causes a phonon scattering mechanism happening that determine in turn a reduced drain current and shift positively the threshold voltage resulting in hindering the device DC/AC capability.