Schottky Barrier Height at TiN/HfO2 Interface of TiN/HfO2/SiO2/Si Structure

被引：1

作者：

Han, K. ^{[1
]}

Wang, X. L. ^{[1
]}

Wang, W. W. ^{[1
]}

Zhang, J. ^{[2
]}

Xiang, J. J. ^{[1
]}

Yang, H. ^{[1
]}

Zhao, C. ^{[1
]}

Chen, D. P. ^{[1
]}

Ye, T. C. ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China

[2] North China Univ Technol, Microelectron Dept, Beijing 100041, Peoples R China

来源：

DIELECTRIC MATERIALS AND METALS FOR NANOELECTRONICS AND PHOTONICS 10 | 2012年 / 50卷 / 04期

关键词：

OXIDES; METAL;

D O I：

10.1149/05004.0299ecst

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Band alignment of TiN/HfO2 interface of TiN/HfO2/SiO2/Si stack is investigated by x-ray photoelectron spectroscopy (XPS). The p-type Schottky barrier height (p-SBH) is found to increase with thicker HfO2 thickness. Since considering only the metal/dielectric interface cannot explain this phenomenon, band alignment of TiN/HfO2 interface of TiN/HfO2/SiO2/Si stack is demonstrated based on band alignment of entire gate stack. Dependence of p-SBH on HfO2 thickness is interpreted and contributed to fixed charges in gate stack, interfacial gap state charges at HfO2/SiO2 interface, and space charges in Si substrate. Electrical measurements of capacitor structures further support XPS results and corresponding explanation.

引用

页码：299 / 304

页数：6

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