Phase selective growth and properties of rhombohedral and cubic indium oxide

被引：96

作者：

Wang, Ch. Y. ^{[1
]}

Cimalla, V. ^{[1
]}

Romanus, H. ^{[1
]}

Kups, Th. ^{[1
]}

Ecke, G. ^{[1
]}

Stauden, Th. ^{[1
]}

Ali, M. ^{[1
]}

Lebedev, V. ^{[1
]}

Pezoldt, J. ^{[1
]}

Ambacher, O. ^{[1
]}

机构：

[1] Tech Univ Ilmenau, Inst Micro & Nanotechnol, D-98684 Ilmenau, Germany

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 01期

关键词：

D O I：

10.1063/1.2219125

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Phase selective growth of rhombohedral and cubic indium oxide polytypes was studied. The selective growth of different polytypes was achieved by adjusting substrate temperature and trimethylindium flow rate during metal organic chemical vapor deposition on c-plane sapphire. The optical band gaps of the cubic and rhombohedral phases were determined to be similar to 3.7 and similar to 3.0 eV, respectively. On the basis of the performed structural investigations, a phenomenological model of the nucleation and growth of highly textured cubic In2O3 on Al2O3 (0001) is proposed. (c) 2006 American Institute of Physics.

引用

页数：3

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