Development of Hybrid Electrical Model for CNT based Through Silicon Vias

被引：0
|
作者：
Kannan, Kaushal [1 ]
Kannan, Sukeshwar [1 ]
Kim, Bruce [1 ]
Cho, Sang-Bock [2 ]
机构：
[1] Univ Alabama, Dept Elect & Comp Engn, Tuscaloosa, AL 35401 USA
[2] Univ Ulsan, Sch Elect Engn, Ulsan, South Korea
来源：
2013 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS) | 2013年
关键词：
CARBON; TRANSPORT;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents a hybrid electrical model of Carbon nanotube (CNT) based Through Silicon Via (TSV) using Metal Oxide Semiconductor (MOS) structural approach which takes into account factors such as substrate doping, operational frequency and voltage transmission levels. The MOS structural approach considers the CNT-based TSVs as a metal-oxide-semiconductor device, thereby resulting in a depletion capacitance which reduces the overall TSV capacitance. This affects the electrical performance of CNT-based TSVs, but has been ignored in previous models. Evaluation of electrical performance has been performed through S-parameter simulation of TSV and the simulation results have been compared with previously published electrical models of CNT-based TSV. The proposed hybrid electrical model shows CNT-based TSV better performance when compared with other published models.
引用
收藏
页码：1022 / 1026
页数：5
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