The ∼3x1020 cm-3 Electron Concentration and Low Specific Contact Resistivity of Phosphorus-Doped Ge on Si by In-Situ Chemical Vapor Deposition Doping and Laser Annealing

被引：31

作者：

Huang, S. -H. ^{[1
]}

Lu, F. -L. ^{[1
]}

Huang, W. -L. ^{[2
]}

Huang, C. -H. ^{[1
]}

Liu, C. W. ^{[1
,3
,4
]}

机构：

[1] Natl Taiwan Univ, Grad Inst Elect Engn, Taipei 106, Taiwan

[2] Natl Taiwan Univ, Grad Inst Appl Phys, Taipei 106, Taiwan

[3] Natl Taiwan Univ, Grad Inst Photon & Optoelect, Taipei 106, Taiwan

[4] Natl Nano Device Lab, Hsinchu 300, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2015年 / 36卷 / 11期

关键词：

Germanium; doping; in-situ; phosphorus; activation; specific contact resistivity; SHALLOW JUNCTION; GERMANIUM; ACTIVATION; SI(100); FILMS;

D O I：

10.1109/LED.2015.2478916

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The phosphorus incorporation by chemical vapor deposition and activation by laser annealing reaches the electron concentration of similar to 3 x 10(20) cm(-3). The pulsed laser not only activates the phosphorus but also produces the biaxial tensile strain of 0.35%. With the nickel germanide contact, the specific contact resistivity reaches as low as 1.5x10(-8) Omega-cm(2) by greatly reducing the tunneling distance. Due to 4% misfit between Ge and Si, there are still misfit dislocations near the Ge/Si interface. The misfit dislocations at the Ge/Si interface lead to the ideality factor of 1.6 for the Ge/Si hetero-junction diode with ON/OFF ratio of similar to 1 x 10(5).

引用

页码：1114 / 1117

页数：4