Modeling capacitance of on-chip coplanar transmission lines over the silicon substrate

被引：0
|
作者：
Gordin, R [1 ]
Goren, D [1 ]
机构：
[1] Univ Haifa, IBM Haifa Res Labs, IL-31905 Haifa, Israel
来源：
SIGNAL PROPAGATION ON INTERCONNECTS, PROCEEDINGS | 2004年
关键词：
D O I：
10.1109/SPI.2004.1409023
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
The paper presents a semi-analytical technique for modeling capacitance of on-chip coplanar transmission lines over conductive silicon substrate. The focus is put on developing expressions for high frequency capacitance which yield reasonable accuracy. The technique is based on the 2-D approach and results in accurate and efficient expressions accounting for frequency dependent behavior of the silicon substrate, as well as for actual transmission lines geometry.
引用
收藏
页码：117 / 120
页数：4
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