Characteristics of liquid-phase-deposited TiO2 film on hydrogenated amorphous silicon

被引：4
|
作者：
Lee, Ming-Kwei [1 ]
Lee, Hung-Chang [1 ]
Hsu, Chih-Min [1 ]
机构：
[1] Natl Sun Yat Sen Univ, Dept Elect Engn, Kaohsiung 80424, Taiwan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2006年 / 45卷 / 10A期
关键词：
a-Si; (NH4)(2)TiF6; LPD-TiO2;
D O I：
10.1143/JJAP.45.7617
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
In this study, titanium oxide films were grown on hydrogenated amorphous silicon by liquid phase deposition with ammonium hexafluoro-titanate and boric acid as sources. The structure of deposited film was amorphous, as examined by X-ray diffraction analysis. The leakage current density of an Al/TiO2/a-Si/p-type Si metal-oxide-semiconductor (MOS) structure can reach 7.35 x 10(-5) A/cm(2) under a reverse bias of 0.91 MV/cm. After O-2 annealing at a temperature of 350 degrees C, the leakage current density can be much improved to 5.31 x 10(-6) A/cm(2) under the reverse bias of 0.91 MV/cm. The dielectric constant is 8.9 after O-2 annealing at 450 degrees C.
引用
收藏
页码：7617 / 7620
页数：4
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