Characteristics of liquid-phase-deposited TiO2 film on hydrogenated amorphous silicon

In this study, titanium oxide films were grown on hydrogenated amorphous silicon by liquid phase deposition with ammonium hexafluoro-titanate and boric acid as sources. The structure of deposited film was amorphous, as examined by X-ray diffraction analysis. The leakage current density of an Al/TiO2/a-Si/p-type Si metal-oxide-semiconductor (MOS) structure can reach 7.35 x 10(-5) A/cm(2) under a reverse bias of 0.91 MV/cm. After O-2 annealing at a temperature of 350 degrees C, the leakage current density can be much improved to 5.31 x 10(-6) A/cm(2) under the reverse bias of 0.91 MV/cm. The dielectric constant is 8.9 after O-2 annealing at 450 degrees C.