Photoconductivity Relaxation Mechanisms of InGaAs/GaAs Quantum Dot Chain Structures

被引：8

作者：

Kondratenko, Serhiy V. ^{[1
]}

Iliash, Sviatoslav A. ^{[1
]}

Vakulenko, Oleg V. ^{[1
]}

Mazur, Yuriy I. ^{[2
]}

Benamara, Mourad ^{[2
]}

Marega, Euclydes, Jr. ^{[2
,3
]}

Salamo, Gregory J. ^{[2
]}

机构：

[1] Taras Shevchenko Natl Univ Kyiv, Dept Phys, 64 Volodymyrska St, UA-01601 Kiev, Ukraine

[2] Univ Arkansas, Inst Nanosci & Engn, Fayetteville, AR 72701 USA

[3] Univ Sao Paulo, Inst Fis Sao Carlos, CP 369, BR-13560970 Sao Carlos, SP, Brazil

来源：

NANOSCALE RESEARCH LETTERS | 2017年 / 12卷

基金：

美国国家科学基金会;

关键词：

Quantum dot chain; InAs/InGaAs; Nanostructure; Semiconductor; Photoluminescence; Photoconductivity recombination; Quantum-size state; GAAS; EL2; ANTISITE; DEFECTS;

D O I：

10.1186/s11671-017-1954-7

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

An experimental study of the photoconductivity time decay in InGaAs/GaAs quantum dot chain structures is reported. Different photoconductivity relaxations resulting from spectrally selecting photoexcitation of InGaAs QWR or QDs as well as GaAs spacers were measured. The photoconductivity relaxation after excitation of 650 nm follows a stretched exponent with decay constant dependent on morphology of InGaAs epitaxial layers. Kinetics with 980 nm excitation are successfully described by equation that takes into account the linear recombination involving Shockley-Read centers in the GaAs spacers and bimolecular recombination via quantum-size states of InGaAs QWRs or QDs.

引用

页数：7

共 50 条

[21] Manganese diffusion in ingaas/gaas quantum well structures [J].

O. V. Vikhrova ;

Yu. A. Danilov ;

M. N. Drozdov ;

B. N. Zvonkov ;

I. L. Kalent’eva .

Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques, 2012, 6 :508-510

[22] Growth and spectroscopy of single lateral InGaAs/GaAs quantum dot molecules [J].

Heldmaier, Matthias ;

Hermannstaedter, Claus ;

Witzany, Marcus ;

Wang, Lijuan ;

Peng, Jie ;

Rastelli, Armando ;

Bester, Gabriel ;

Schmidt, Oliver G. ;

Michler, Peter .

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2012, 249 (04) :710-720

[23] Optical studies of self-assembled InGaAs/GaAs quantum dot structures drown by atomic layer epitaxy [J].

Rho, H ;

Song, JD ;

Park, YJ ;

Choi, WJ ;

Lee, JI .

JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2004, 45 (01) :149-153

[24] Carrier Hopping and Relaxation in InAs/GaAs Quantum Dot Heterostructures [J].

Wu, Ya-Fen ;

Lee, Jiunn-Chyi .

MATERIALS RESEARCH AND APPLICATIONS, PTS 1-3, 2014, 875-877 :9-+

[25] Quantum network formation in porous InGaAs/GaAs multilayer structures [J].

Orlov, LK ;

Ivina, NL ;

Vostokov, NV ;

Alyabina, NA ;

Zvonkov, BN ;

Demidov, ES .

SOLID STATE CRYSTALS 2002: CRYSTALLINE MATERIALS FOR OPTOELECTRONICS, 2003, 5136 :228-235

[26] Determination of spontaneous emission quantum efficiency in InGaAs/GaAs quantum well structures [J].

Ding, Ding ;

Johnson, Shane R. ;

Wang, Jiang-Bo ;

Yu, Shui-Qing ;

Zhang, Yong-Hang .

SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, 2008, 6841

[27] Self-assembled InGaAs/GaAs quantum dot photodetector on germanium substrate [J].

Banerjee, Sreetama ;

Halder, Nilanjan ;

Chakrabarti, Subhananda .

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 2, 2012, 9 (02) :322-325

[28] Emission and elastic strain in InAs dot-in-a well InGaAs/GaAs structures [J].

Polupan, G. ;

Vega-Macotela, L. G. ;

Sanchez Silva, F. .

JOURNAL OF LUMINESCENCE, 2012, 132 (05) :1270-1273

[29] InGaAs/GaAs quantum dot heterostructures for 3–5 μm IR detectors [J].

A. V. Antonov ;

D. M. Gaponova ;

V. M. Danil’tsev ;

M. N. Drozdov ;

L. D. Moldavskaya ;

A. V. Murel’ ;

V. S. Tulovchikov ;

V. I. Shashkin .

Semiconductors, 2005, 39 :86-88

[30] Carrier capture dynamics of single InGaAs/GaAs quantum-dot layers [J].

Chauhan, K. N. ;

Riffe, D. M. ;

Everett, E. A. ;

Kim, D. J. ;

Yang, H. ;

Shen, F. K. .

JOURNAL OF APPLIED PHYSICS, 2013, 113 (20)

← 1 2 3 4 5 →