Photoconductivity Relaxation Mechanisms of InGaAs/GaAs Quantum Dot Chain Structures

被引：8
作者：
Kondratenko, Serhiy V. [1 ]
Iliash, Sviatoslav A. [1 ]
Vakulenko, Oleg V. [1 ]
Mazur, Yuriy I. [2 ]
Benamara, Mourad [2 ]
Marega, Euclydes, Jr. [2 ,3 ]
Salamo, Gregory J. [2 ]
机构：
[1] Taras Shevchenko Natl Univ Kyiv, Dept Phys, 64 Volodymyrska St, UA-01601 Kiev, Ukraine
[2] Univ Arkansas, Inst Nanosci & Engn, Fayetteville, AR 72701 USA
[3] Univ Sao Paulo, Inst Fis Sao Carlos, CP 369, BR-13560970 Sao Carlos, SP, Brazil
来源：
NANOSCALE RESEARCH LETTERS | 2017年 / 12卷
基金：
美国国家科学基金会;
关键词：
Quantum dot chain; InAs/InGaAs; Nanostructure; Semiconductor; Photoluminescence; Photoconductivity recombination; Quantum-size state; GAAS; EL2; ANTISITE; DEFECTS;
D O I：
10.1186/s11671-017-1954-7
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
An experimental study of the photoconductivity time decay in InGaAs/GaAs quantum dot chain structures is reported. Different photoconductivity relaxations resulting from spectrally selecting photoexcitation of InGaAs QWR or QDs as well as GaAs spacers were measured. The photoconductivity relaxation after excitation of 650 nm follows a stretched exponent with decay constant dependent on morphology of InGaAs epitaxial layers. Kinetics with 980 nm excitation are successfully described by equation that takes into account the linear recombination involving Shockley-Read centers in the GaAs spacers and bimolecular recombination via quantum-size states of InGaAs QWRs or QDs.
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页数：7
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