Design of a broadband Ka-band MMIC LNA using deep negative feedback loop

被引：6

作者：

Wang, Gang ^{[1
]}

Chen, Wei ^{[1
]}

Liu, Jiarui ^{[1
]}

Mo, Jiongjiong ^{[1
]}

Chen, Hua ^{[1
]}

Wang, Zhiyu ^{[1
]}

Yu, Faxin ^{[1
]}

机构：

[1] Zhejiang Univ, Sch Aeronaut & Astronaut, 38 Zheda Rd, Hangzhou, Zhejiang, Peoples R China

来源：

IEICE ELECTRONICS EXPRESS | 2018年 / 15卷 / 10期

基金：

美国国家科学基金会;

关键词：

Ka-band; low noise amplifier (LNA); MMIC; broadband;

D O I：

10.1587/elex.15.20180317

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we present a broadband Ka-band LNA using 0.15-mu m GaAs pseudomorphic high electron mobility transistor (pHEMT) process. By using bandwidth enhancement techniques and deep negative feedback technology, the LNA achieves relatively broadband performances. The LNA attains 20 dB small signal gain from 25 to 40 GHz and shows a measured noise figure of 2.8 dB from 25 to 40 GHz with 230-mW dc power consumption. The input and output return loss of the LNA is less than 8 dB, which is competitive compared with other published Ka-band LNAs. The size of the chip is 2.5 mm x 1.2 mm.

引用

页数：6

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