Feasibility of immersion lithography

被引：22

作者：

Owa, S ^{[1
]}

Nagasaka, H ^{[1
]}

Ishii, Y ^{[1
]}

Hirakawa, O ^{[1
]}

Yamamoto, T ^{[1
]}

机构：

[1] Nikon Inc, Kumagaya, Saitama 3608559, Japan

来源：

OPTICAL MICROLITHOGRAPHY XVII, PTS 1-3 | 2004年 / 5377卷

关键词：

immersion lithography; feasibility; exposure tool; polarization; 45nm node;

D O I：

10.1117/12.536852

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Feasibility of ArF (193nm) immersion lithography is reported based on our recent experimental and theoretical studies. Local fill method of water, edge shot, high NA projection optics, focus sensing, water supply, polarization effect, polarized illumination and resist are investigated. Although we recognize there are some remaining engineering risks, we have judged that ArF immersion lithography is basically feasible and is a very promising method that can reach the half pitch required for the 45nm node. On this basis we have planned our development schedule of immersion exposure tools.

引用

页码：264 / 272

页数：9

共 4 条

[1] Semiconductor foundry, lithography, and partners
Lin, BJ
[J]. EMERGING LITHOGRAPHIC TECHNOLOGIES VI, PTS 1 AND 2, 2002, 4688 : 11 - 24
[2] Advantage and feasibility of immersion lithography
Owa, S
Nagasaka, H
[J]. JOURNAL OF MICROLITHOGRAPHY MICROFABRICATION AND MICROSYSTEMS, 2004, 3 (01): : 97 - 103
[3] Immersion lithography; its potential performance and issues
Owa, S
Nagasaka, H
[J]. OPTICAL MICROLITHOGRAPHY XVI, PTS 1-3, 2003, 5040 : 724 - 733
[4] Immersion lithography at 157 nm
Switkes, M
Rothschild, M
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2001, 19 (06): : 2353 - 2356

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