Enhancing the formation and shear resistance of nitrifying biofilms on membranes by surface modification

被引:67
|
作者
Lackner, Susanne [1 ]
Holmberg, Maria [2 ]
Terada, Akihiko [1 ]
Kingshott, Peter [3 ]
Smets, Barth F. [1 ]
机构
[1] Tech Univ Denmark, Dept Environm Engn, DK-2800 Lyngby, Denmark
[2] Tech Univ Denmark, Dept Micro & Nanotechnol, DK-4000 Roskilde, Denmark
[3] Univ Aarhus, Interdisciplinary Nanosci Ctr iNANO, Fac Sci, DK-8000 Aarhus C, Denmark
关键词
Surface modification; Biofilm formation; Shear stress; Detachment; Poly(ethyleneglycol) (PEG); SELF-ASSEMBLED MONOLAYERS; BACTERIAL ADHESION; MICROBIAL ADHESION; POLY(ETHYLENE GLYCOL); POLYMERIC SUPPORTS; CHAIN-LENGTH; DETACHMENT; ENHANCEMENT; GROWTH; BRUSH;
D O I
10.1016/j.watres.2009.05.011
中图分类号
X [环境科学、安全科学];
学科分类号
08 ; 0830 ;
摘要
Polypropylene (PP) membranes and polyethylene (PE) surfaces were modified to enhance formation and shear resistance of nitrifying biofilms for wastewater treatment applications. A combination of plasma polymerization and wet chemistry was employed to ultimately introduce poly(ethyleneglycol) (PEG) chains with two different functional groups (-PEG-NH2 and -PEG-CH3). Biofilm growth experiments using a mixed nitrifying bacterial culture revealed that the specific combination of PEG chains with amino groups resulted in most biofilm formation on both PP and PE samples. Detachment experiments showed similar trends: biofilms on -PEG-NH2 modified surfaces were much stronger compared to the other modifications and the unmodified reference surfaces. Electrostatic interactions between the protonated amino group and negatively charged bacteria as well as PEG chain density which can affect the surface structure might be possible explanations of the superiority of the -PEG-NH2 modification. The success of the-PEG-NH2 modification was independent of the original surface and might, therefore, be used in wastewater treatment bioreactors to improve reactor performance by making biofilm formation more stable and predictable. (C) 2009 Elsevier Ltd. All rights reserved.
引用
收藏
页码:3469 / 3478
页数:10
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