Phase diagram of static- and dynamic-domain formation in weakly coupled GaAs/AlAs superlattices

被引:15
|
作者
Ohtani, N [1 ]
Egami, N
Grahn, HT
Ploog, KH
机构
[1] ATR Adapt Commun Res Labs, Seika, Kyoto 6190288, Japan
[2] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany
来源
PHYSICAL REVIEW B | 2000年 / 61卷 / 08期
关键词
D O I
10.1103/PhysRevB.61.R5097
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report on the phase diagram of static- and dynamic-domain formation in weakly coupled GaAs/AlAs superlattices (SL's). We have performed a detailed investigation of self-oscillations of the photocurrent using the control parameters of applied bias and carrier density inside the SL's. The resulting phase diagram clearly demonstrates that the boundary between oscillating- and Static-domain formation, defined as a critical carrier density, varies with bias voltage.
引用
收藏
页码:R5097 / R5100
页数:4
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