Profiling of ultrashallow junctions

被引:0
作者
Goeckner, MJ
Felch, SB
Fang, Z
Oberhofer, A
Chia, VKF
Mount, GR
Poulakos, M
Keenan, WA
机构
[1] Varian Res Ctr, Palo Alto, CA 94304 USA
[2] Four Dimens, Hayward, CA 94403 USA
[3] Charles Evans & Associates, Redwood City, CA 94063 USA
[4] Solecon Labs, San Jose, CA 95131 USA
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2000年 / 18卷 / 01期
关键词
Carrier concentration - Computational methods - Current voltage characteristics - Hall effect - Rapid thermal annealing - Secondary ion mass spectrometry - Semiconductor device models - Semiconductor doping;
D O I
10.1116/1.591214
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Ultrashallow profiles challenge the capabilities of all characterization techniques. In this article, three diagnostic techniques are tested, secondary ion mass spectrometry (SIMS), capacitance-voltage (C-V) profiling and spreading resistance analysis (SRA). SIMS is used to measure the impurity concentration profiles, C-V is used to measure carrier concentration profiles directly and SRA is used to measure resistivity profiles, from which carrier concentrations can be derived. Both SIMS and SRA are calibrated techniques that relate the measured parameter to concentration or resistivity via calibration standards. C-V derives the carrier concentration directly through a mathematical model and calculation. Some of the assumptions, procedures, and limitations of these three techniques for ultrashallow profiles are reviewed and discussed. For this article these diagnostic techniques were used to examine six wafers that had been plasma doped followed by a rapid thermal anneal and three wafers that had been beamline implemented followed by a soak anneal. (C) 2000 American Vacuum Society. [S0734-211X(00)00201-3].
引用
收藏
页码:472 / 476
页数:5
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