Enhancement of light absorption in a quantum well by surface plasmon polariton

被引:11
作者
Khurgin, J. B. [1 ]
Sun, G. [2 ]
机构
[1] Johns Hopkins Univ, Dept Elect & Comp Engn, Baltimore, MD 21218 USA
[2] Univ Massachusetts, Dept Phys, Boston, MA 02125 USA
关键词
gallium compounds; III-V semiconductors; indium compounds; light absorption; polaritons; semiconductor quantum wells; surface plasmons;
D O I
10.1063/1.3137186
中图分类号
O59 [应用物理学];
学科分类号
摘要
We investigate analytically the degree to which the absorption of light in a single quantum well can be enhanced in the proximity of a structured metallic surface and show that the wavelength at which the maximum enhancement of about one order of magnitude is attained depends on metal loss and the initial absorption in a quantum well.
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页数:3
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