Simulation of transient enhanced diffusion of boron induced by silicon self-implantation

被引：0

作者：

Uematsu, M

机构：

来源：

SISPAD '97 - 1997 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES | 1997年

关键词：

D O I：

10.1109/SISPAD.1997.621343

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The time, dose, and energy dependence of boron transient enhanced diffusion (TED) induced by silicon self-implantation has been simulated taking into account the time evolution of self-interstitial clusters, The kinetics of cluster dissolution and growth are combined with the kick-out mechanism for boron diffusion, and the decrease in the cluster evolution rate with time is taken into account. Using a unified set of parameters, the simulation explains some complex characteristics of TED; that is, the enhancement is independent of the implant dose at short annealing times, while it increases with increasing implant dose after longer annealing times. In addition, the implant energy dependence of TED can be explained by the proximity of the damage to the surface.

引用

页码：89 / 92

页数：4

共 50 条

[21] KINETICS OF DAMAGE PRODUCTION IN SILICON DURING SELF-IMPLANTATION
MASZARA, WP
ROZGONYI, GA
JOURNAL OF APPLIED PHYSICS, 1986, 60 (07) : 2310 - 2315
[22] EFFECT OF RECOIL IMPLANTATION OF OXYGEN ON BORON ENHANCED DIFFUSION IN SILICON
FAN, D
JACCODINE, RJ
ION BEAM PROCESSING OF ADVANCED ELECTRONIC MATERIALS, 1989, 147 : 79 - 84
[23] Modeling of the transient enhanced diffusion of boron implanted into preamorphized silicon:: the case of BF2+ implantation
Dusch, A
Marcon, J
Masmoudi, K
Olivié, F
Benzohra, M
Ketata, K
Ketata, M
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2001, 80 (1-3): : 65 - 67
[24] Simulation of clustering and transient enhanced diffusion of boron in silicon (vol 84, pg 4781, 1998)
Uematsu, M
JOURNAL OF APPLIED PHYSICS, 1999, 85 (06) : 3386 - 3386
[25] Boron transient enhanced diffusion in heavily phosphorus doped silicon
Huang, MB
Myler, U
Simpson, TW
Simpson, PJ
Mitchell, IV
MATERIALS MODIFICATION AND SYNTHESIS BY ION BEAM PROCESSING, 1997, 438 : 101 - 106
[26] Effects of phosphorus doping on boron transient enhanced diffusion in silicon
Huang, MB
Simpson, TW
Mitchell, IV
APPLIED PHYSICS LETTERS, 1997, 70 (09) : 1146 - 1148
[27] Modeling of the transient enhanced diffusion of boron implanted into preamorphized silicon
Lampin, E
Senez, V
Claverie, A
JOURNAL OF APPLIED PHYSICS, 1999, 85 (12) : 8137 - 8144
[28] Effects of interstitial clustering on transient enhanced diffusion of Boron in silicon
Solmi, S
Valmorri, S
MATERIALS MODIFICATION AND SYNTHESIS BY ION BEAM PROCESSING, 1997, 438 : 95 - 100
[29] ON THE THEORY OF TRANSIENT ENHANCED DIFFUSION IN BORON-IMPLANTED SILICON
ANTONCIK, E
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1991, 116 (04): : 375 - 387
[30] Modeling of the transient enhanced diffusion of boron implanted into preamorphized silicon
J Appl Phys, 12 (8137):

← 1 2 3 4 5 →