Simulation of transient enhanced diffusion of boron induced by silicon self-implantation

被引：0
|
作者：
Uematsu, M
机构：
来源：
SISPAD '97 - 1997 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES | 1997年
关键词：
D O I：
10.1109/SISPAD.1997.621343
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The time, dose, and energy dependence of boron transient enhanced diffusion (TED) induced by silicon self-implantation has been simulated taking into account the time evolution of self-interstitial clusters, The kinetics of cluster dissolution and growth are combined with the kick-out mechanism for boron diffusion, and the decrease in the cluster evolution rate with time is taken into account. Using a unified set of parameters, the simulation explains some complex characteristics of TED; that is, the enhancement is independent of the implant dose at short annealing times, while it increases with increasing implant dose after longer annealing times. In addition, the implant energy dependence of TED can be explained by the proximity of the damage to the surface.
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页码：89 / 92
页数：4
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