Giant anisotropic magnetoresistance and planar Hall effect in the Dirac semimetal Cd3As2

被引：118

作者：

Li, Hui ^{[1
]}

Wang, Huan-Wen ^{[2
]}

He, Hongtao ^{[3
]}

Wang, Jiannong ^{[1
]}

Shen, Shun-Qing ^{[2
]}

机构：

[1] Hong Kong Univ Sci & Technol, Dept Phys, Hong Kong, Peoples R China

[2] Univ Hong Kong, Dept Phys, Pokfulam Rd, Hong Kong, Peoples R China

[3] Southern Univ Sci & Technol, Dept Phys, Shenzhen 518055, Guangdong, Peoples R China

来源：

PHYSICAL REVIEW B | 2018年 / 97卷 / 20期

基金：

中国国家自然科学基金;

关键词：

NEGATIVE MAGNETORESISTANCE; ULTRAHIGH MOBILITY;

D O I：

10.1103/PhysRevB.97.201110

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Anisotropic magnetoresistance is the change tendency of resistance of a material on the mutual orientation of the electric current and the external magnetic field. Here, we report experimental observations in the Dirac semimetal Cd3As2 of giant anisotropic magnetoresistance and its transverse version, called the planar Hall effect. The relative anisotropic magnetoresistance is negative and up to - 68% at 2 K and 10 T. The high anisotropy and the minus sign in this isotropic and nonmagnetic material are attributed to a field- dependent current along the magnetic field, which may be induced by the Berry curvature of the band structure. This observation not only reveals unusual physical phenomena inWeyl and Dirac semimetals, but also finds additional transport signatures of Weyl and Dirac fermions other than negative magnetoresistance.

引用

页数：6

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