An Analysis of Flash Page Reuse With WOM Codes

被引:8
作者
Yadgar, Gala [1 ]
Yaakobi, Eitan [1 ]
Margaglia, Fabio [2 ]
Li, Yue [3 ]
Yucovich, Alexander [1 ]
Bundak, Nachum [1 ]
Gilon, Lior [1 ]
Yakovi, Nir [1 ]
Schuster, Assaf [1 ]
Brinkmann, Andre [4 ]
机构
[1] Technion, Comp Sci Dept, Haifa, Israel
[2] Pure Storage, Mountain View, CA USA
[3] CALTECH, Pasadena, CA 91125 USA
[4] Johannes Gutenberg Univ Mainz, Mainz, Germany
基金
以色列科学基金会;
关键词
WOM codes; NAND flash; flash translation layer; SSD; offline analysis; WRITE-ONCE MEMORIES; PERFORMANCE;
D O I
10.1145/3177886
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
Flash memory is prevalent in modern servers and devices. Coupled with the scaling down of flash technology, the popularity of flash memory motivates the search for methods to increase flash reliability and lifetime. Erasures are the dominant cause of flash cell wear, but reducing them is challenging because flash is a write-once medium-memory cells must be erased prior to writing. An approach that has recently received considerable attention relies on write-once memory (WOM) codes, designed to accommodate additional writes on write-once media. However, the techniques proposed for reusing flash pages with WOM codes are limited in their scope. Many focus on the coding theory alone, whereas others suggest FTL designs that are application specific, or not applicable due to their complexity, overheads, or specific constraints of multilevel cell (MLC) flash. This work is the first that addresses all aspects of page reuse within an end-to-end analysis of a general-purpose FTL on MLC flash. We use a hardware evaluation setup to directly measure the short-and long-term effects of page reuse on SSD durability and energy consumption, and show that FTL design must explicitly take them into account. We then provide a detailed analytical model for deriving the optimal garbage collection policy for such FTL designs, and for predicting the benefit from reuse on realistic hardware and workload characteristics.
引用
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页数:39
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