Resist materials for proton micromachining

被引:61
作者
van Kan, JA
Sanchez, JL
Xu, B
Osipowicz, T
Watt, F
机构
[1] Natl Univ Singapore, Dept Phys, Singapore 117548, Singapore
[2] Inst Microelect, Singapore 117685, Singapore
关键词
micromachining; nuclear microscope; high aspect ratio;
D O I
10.1016/S0168-583X(99)00392-4
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
The production of high aspect ratio microstructures is a potential growth area. The combination of deep X-ray lithography with electroforming and micromolding (i.e. LIGA) is one of the main techniques used to produce 3D microstructures. The new technique of proton micromachining employs focused MeV protons in a direct write process which is complementary to LIGA, e.g. micromachining with 2 MeV protons results in microstructures with a height of 63 mu m and lateral sub-micrometer resolution in PMMA resist. The aim of this paper is to investigate the capabilities of proton micromachining as a lithographic technique. This involves the study of different types of resists. The dose distribution of high molecular weight PMMA is compared with three other types of resist: First the positive photo resist AZ P4620 will be discussed and then PMGI SF 23, which can be used as a deep UV, e-beam or X-ray resist. Finally SU-8, a new deep UV negative type of chemically amplified resist will be discussed. All these polymers are applied using the spin coating technique at thicknesses of between 1 and 36 mu m (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:179 / 184
页数:6
相关论文
共 15 条
[1]   RADIATION EFFECTS OF ION-BEAMS ON POLYSTYRENE RESIST FILMS [J].
AOKI, Y ;
KOUCHI, N ;
SHIBATA, H ;
TAGAWA, S ;
TABATA, Y ;
IMAMURA, S .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1988, 33 (1-4) :799-802
[2]  
Becker E. W., 1986, Microelectronic Engineering, V4, P35, DOI 10.1016/0167-9317(86)90004-3
[3]   Combining microstereolithography and thick resist UV lithography for 3D microfabrication [J].
Bertsch, A ;
Lorenz, H ;
Renaud, P .
MICRO ELECTRO MECHANICAL SYSTEMS - IEEE ELEVENTH ANNUAL INTERNATIONAL WORKSHOP PROCEEDINGS, 1998, :18-23
[4]   Microstereophotolithography using a liquid crystal display as dynamic mask-generator [J].
Bertsch, A ;
Zissi, S ;
Jezequel, JY ;
Corbel, S ;
Andre, JC .
MICROSYSTEM TECHNOLOGIES, 1997, 3 (02) :42-47
[5]   HPR 506 photoresist used as a positive tone ion resist [J].
Bruenger, WH ;
Buchmann, LM ;
Torkler, M ;
Sinkwitz, S .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (06) :3924-3927
[6]   DEEP X-RAY-LITHOGRAPHY FOR THE PRODUCTION OF 3-DIMENSIONAL MICROSTRUCTURES FROM METALS, POLYMERS AND CERAMICS [J].
EHRFELD, W ;
LEHR, H .
RADIATION PHYSICS AND CHEMISTRY, 1995, 45 (03) :349-365
[7]  
IKUTA K, 1993, P IEEE INT WORKSH MI, V47, P42
[8]  
LORENZ H, 1996, P MME 96 MICR MECH E
[9]  
MADOU M, 1997, FUNDAMENTALS MICROFA, P286
[10]   A high resolution beam scanning system for deep ion beam lithography [J].
Sanchez, JL ;
van Kan, JA ;
Osipowicz, T ;
Springham, SV ;
Watt, F .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1998, 136 :385-389