Epitaxial electrodeposition of lead telluride films on indium phosphide single crystals

被引：26

作者：

Beaunier, L ^{[1
]}

Cachet, H ^{[1
]}

Cortes, R ^{[1
]}

Froment, M ^{[1
]}

机构：

[1] Univ Paris 06, CNRS, UPR 15, F-75252 Paris 05, France

来源：

JOURNAL OF ELECTROANALYTICAL CHEMISTRY | 2002年 / 532卷 / 1-2期

关键词：

lead telluride; electrodeposition; epitaxial growth; indium phosphide;

D O I：

10.1016/S0022-0728(02)00758-1

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

Epitaxial PbTe films were electrodeposited on (1 1 1) InP single crystals, from solutions containing Pb2+ and Cd2+ ions, the latter being largely in excess. High energy electron diffraction and X-ray diffraction reveal the formation of epitaxial films accompanied by the presence of polycrystalline PbTe. The poor epitaxy is related to a large lattice mismatch with the InP substrate. A low density of planar defects, compared with II-VI chalcogenides, is observed. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：215 / 218

页数：4

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