Synthesis of radially aligned single-walled carbon nanotubes on a SiO2/Si substrate by introducing sodium chloride

被引：3

作者：

Rao, Fubo ^{[1
]}

Zhou, Yuxiu ^{[1
]}

Li, Tie ^{[1
]}

Wang, Yuelin ^{[1
]}

机构：

[1] Chinese Acad Sci, Natl Key Lab Microsyst Technol, State Key Labs Transducer Technol, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China

来源：

CARBON | 2009年 / 47卷 / 10期

基金：

中国国家自然科学基金;

关键词：

PLANE SAPPHIRE; GROWTH; SILICA;

D O I：

10.1016/j.carbon.2009.05.016

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Radially aligned single-walled carbon nanotubes (SWCNTs) were synthesized on a SiO2/Si substrate with thermal chemical vapor deposition by introducing sodium chloride (NaCl) onto the substrate surface. The growth of such SWCNTs was sensitive to the thickness of the SiO2 layer on the Si substrate and the speed of the reactive gas flow. Cristobalite crystals were found to be formed on the substrate after the SWCNT growth process and were significant for the growth of radially aligned SWCNTs. The SWCNTs were assumed to be directed by the cristobalite crystals along a certain crystal direction on the (101) crystal face. (C) 2009 Elsevier Ltd. All rights reserved.

引用

页码：2548 / 2552

页数：5

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