Fabrication and Characterization of Miniaturized NbN Superconducting Quantum Interference Devices With Nanobridge Junctions

Reduction of the size of the superconducting quantum interference device (SQUID) ring structure improves its sensitivity to magnetic moments. Nanobridge junctions are advantageous for SQUID miniaturization. However, many planar SQUIDs with nanobridge junctions have shallow flux modulation depths because of their nonideal Josephson current-phase relationships. Here, we fabricated a three-dimensional niobium nitride (NbN) miniaturized SQUID in which the nanobridge junction structures are much thinner than the superconducting ring. We grew a thick superconducting NbN film on a silicon wafer and embedded an insulating slit in the middle of the film. By setting two thin nanobridge junctions across this insulating slit, we were able to manufacture NbN miniaturized SQUIDs that, in principle, can become nano-SQUIDs. The flux modulation depths of these devices reached 36% at 4.2 K. In addition, the fabricated devices show reversible current-voltage characteristics in the absence of any shunting resistance.