Zinc oxide doped indium oxide ohmic contacts to p-type GaN

被引：6

作者：

Chen, Lung-Chien ^{[1
]}

Chen, Chih-Ming

Liu, Chie-Sheng

Hong, Lu-Sheng

机构：

[1] Natl Taipei Univ Technol, Dept Electroopt Engn, Taipei 106, Taiwan

[2] Natl Taiwan Univ Sci & Technol, Dept Chem Engn, Taipei 106, Taiwan

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2006年 / 153卷 / 11期

关键词：

D O I：

10.1149/1.2337769

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

We report on the zinc oxide doped indium oxide (ZIO) transparent ohmic contact to the p-GaN. Optimum conditions were selected to minimize the lowest specific contact resistance to 1.4 x 10(-4) Omega cm(2), as examined by transmission line model after heat treatment process at an alloying temperature of 500 S C for 10 min in air. ZIO films were also applied to GaN-based light-emitting diodes (LEDs) to form an electrode with a p-type ohmic contact. A light output power and an external quantum efficiency of the LED with ZIO contact of 5.61 mW and 10.63%, respectively, were measured at a forward current of 20 mA at room temperature. (c) 2006 The Electrochemical Society.

引用

页码：G931 / G933

页数：3

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