Towards Bandwidth-enhanced GaN-based Terahertz Photoconductive Antennas

被引：0
|
作者：
Ghindani, Dipa [1 ]
Bhattacharya, Arkabrata [1 ]
Samad, Sumayya [1 ,2 ]
Nayak, Banoj [1 ]
Shah, Amit P. [1 ]
Rahman, A. Azizur [1 ]
Bhattacharya, Arnab [1 ]
Prabhu, S. S. [1 ]
机构：
[1] Tata Inst Fundamental Res, Homi Bhabha Rd, Mumbai 400005, Maharashtra, India
[2] Cochin Univ Sci & Technol, Int Sch Photon, Cochin 682022, Kerala, India
来源：
2019 44TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ) | 2019年
关键词：
D O I：
10.1109/irmmw-thz.2019.8874074
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this work, we explore a photoconductive antenna for the emission of Terahertz radiation based on high resistive (HR) Gallium Nitride (GaN) epilayers. Typically, GaN has faster carrier relaxation times as compared to SI-GaAs, which is conventionally used as substrate for conventional photoconductive antennas. Faster carrier lifetime is expected to result into enhanced bandwidth of the emitted THz radiation.
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页数：2
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