Enhanced growth of CoSi2 on epitaxial Si0.7Ge0.3 with a sacrificial amorphous Si interlayer

被引：12

作者：

Wu, WW

Chiang, TF

Cheng, SL

Lee, SW

Chen, LJ ^{[1
]}

Peng, YH

Cheng, HH

机构：

[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu, Taiwan

[2] Natl Taiwan Univ, Dept Elect Engn, Taipei, Taiwan

[3] Natl Taiwan Univ, Ctr Condensed Matter Sci, Taipei, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 05期

关键词：

D O I：

10.1063/1.1494103

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Enhanced growth of CoSi2 on epitaxial Si0.7Ge0.3 has been achieved with an interposing amorphous-Si (a-Si) layer. The a-Si layer was used as a sacrificial layer to prevent Ge segregation, decrease the growth temperature, as well as maintain the interface flatness and morphological stability in forming CoSi2 on Si0.7Ge0.3 grown by molecular beam eptiaxy. The process promises to be applicable to the fabrication of high-speed Si-Ge devices. (C) 2002 American Institute of Physics.

引用

收藏

页码：820 / 822

页数：3

相关论文

共 17 条

[1] Film thickness effects in the Co-Si1-xGex solid phase reaction [J].

Boyanov, BI ;

Goeller, PT ;

Sayers, DE ;

Nemanich, RJ .

JOURNAL OF APPLIED PHYSICS, 1998, 84 (08) :4285-4291

[2] Preferential Co-Si bonding at the Co/SiGe(100) interface [J].

Boyanov, BI ;

Goeller, PT ;

Sayers, DE ;

Newmanich, RJ .

APPLIED PHYSICS LETTERS, 1997, 71 (21) :3060-3062

[3] Morphological stability of TiSi2 on polycrystalline silicon [J].

Chen, JF ;

Chen, LJ .

THIN SOLID FILMS, 1997, 293 (1-2) :34-39

[4] Formation and stability of silicides on polycrystalline silicon [J].

Colgan, EG ;

Gambino, JP ;

Hong, QZ .

MATERIALS SCIENCE & ENGINEERING R-REPORTS, 1996, 16 (02) :43-96

[5] CoSi2 nucleation in the presence of Ge [J].

Detavernier, C ;

Van Meirhaeghe, TRL ;

Cardon, F ;

Maex, K .

THIN SOLID FILMS, 2001, 384 (02) :243-250

[6] Co silicide formation on SiGeC/Si and SiGe/Si layers [J].

Donaton, RA ;

Maex, K ;

Vantomme, A ;

Langouche, G ;

Morciaux, Y ;

StAmour, A ;

Sturm, JC .

APPLIED PHYSICS LETTERS, 1997, 70 (10) :1266-1268

[7] Measuring Ge segregation by real-time stress monitoring during Si1-xGex molecular beam epitaxy [J].

Floro, JA ;

Chason, E .

APPLIED PHYSICS LETTERS, 1996, 69 (25) :3830-3832

[8] Germanium segregation in the Co/SiGe/Si(001) thin film system [J].

Goeller, PT ;

Boyanov, BI ;

Sayers, DE ;

Nemanich, RJ ;

Myers, AF ;

Steel, EB .

JOURNAL OF MATERIALS RESEARCH, 1999, 14 (11) :4372-4384

[9] Study on Ge/Si ratio, silicidation, and strain relaxation of high temperature sputtered Co/Si1-xGex structures [J].

Huang, HJ ;

Chen, KM ;

Chang, CY ;

Huang, TY ;

Chen, LP ;

Huang, GW .

JOURNAL OF APPLIED PHYSICS, 2000, 88 (04) :1831-1837

[10] Study of boron effects on the reaction of Co and Si1-xGex at various temperatures [J].

Huang, HJ ;

Chen, KM ;

Chang, CY ;

Huang, TY ;

Chang, TC ;

Chen, LP ;

Huang, GW .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 2000, 18 (04) :1448-1454