Semi insulating N-gallium nitride (GaN) on sapphire surface reflection dataset obtained at millimeter wave frequencies 107.35-165 GHz

被引：0

作者：

Roy, Biswadev ^{[1
]}

Wu, Marvin H. ^{[1
]}

Vlahovic, Branislav ^{[1
]}

机构：

[1] North Carolina Cent Univ, Dept Math & Phys, 1900 Concord St, Durham, NC 27707 USA

来源：

DATA IN BRIEF | 2020年 / 33卷

基金：

美国国家科学基金会;

关键词：

Millimeter; Voltage; Reflection; Semi-insulating; Oscillator; Quasi-optical;

D O I：

10.1016/j.dib.2020.106419

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

A systematic collection of voltage reflection data for semiinsulating N-GaN wafer surface along with the reference reflection voltages are accomplished using a very stable continuous wave (CW) frequency stable probe source. The 2 '' diameter direct-bandgap 5 mu m silicon doped 10(5) Omega-cm GaN on 434 mu m sapphire is a commercial sample and was mounted in the path of collimated BWO generated millimeter wave beam with spot size similar to 3 mm and rotated 64.5 degrees to millimeter wave reflected energy into an antenna fed zero-bias Schottky barrier diode (ZBD), a negative polarity detector with responsivity 3.6 V/mW. Data obtained pertain to photon energies between 400 and 700 mu eV (107.35-165 GHz). Data contains the 30-sample average and respective standard deviations for reference (mirror) and N-GaN reflected voltages. Anomalies in d.c. reflection coefficients (based on the raw data) are identified for users. (c) 2020 The Authors. Published by Elsevier Inc. This is an open access article under the CC BY license (http://creativecommons.org/licenses/by/4.0/)

引用

页数：7