Study of the linear electro-optic effect in α-GaN by electroreflectance

被引:16
作者
Shokhovets, S [1 ]
Goldhahn, R [1 ]
Gobsch, G [1 ]
机构
[1] Tech Univ Ilmenau, Inst Phys, D-98684 Ilmenau, Germany
来源
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2002年 / 93卷 / 1-3期
关键词
electro-optic effect; GaN; electroflectance;
D O I
10.1016/S0921-5107(02)00031-4
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The linear electro-optic (Pockels) effect for hexagonal GaN was studied by electrolytic electroreflectance spectroscopy. The electric Field strength and space charge region parameters were extracted from Franz-Keldysh oscillations and photocurrent spectra. Data analysis yielded for the linear electro-optic coefficient r(13) a value of (1.55 +/- 0.08) pm V-1 indicating an appreciable ionic contribution which can be related to the converse piezoelectric effect. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:215 / 218
页数:4
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