Quantum capacitance measurement of bilayer graphene

被引：1

作者：

Nagashio, K. ^{[1
]}

Kanayama, K. ^{[1
]}

Nishimura, T. ^{[1
]}

Toriumi, A. ^{[1
]}

机构：

[1] Univ Tokyo, Dept Mat Engn, Bunkyo Ku, Tokyo 1138656, Japan

来源：

SILICON COMPATIBLE MATERIALS, PROCESSES, AND TECHNOLOGIES FOR ADVANCED INTEGRATED CIRCUITS AND EMERGING APPLICATIONS 4 | 2014年 / 61卷 / 03期

关键词：

D O I：

10.1149/06103.0075ecst

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

We demonstrate a considerable suppression of the low-field leakage through a Y2O3 topgate insulator on graphene by applying high-pressure O-2 at 100 atm during post-deposition annealing. Then, two kinds of issues, band gap opening and inter-band scattering at high carrier density, are discussed through the density of states of bilayer graphene estimated by the quantum capacitance measurement.

引用

页码：75 / 80

页数：6

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