Quantum capacitance measurement of bilayer graphene

被引：1
|
作者：
Nagashio, K. [1 ]
Kanayama, K. [1 ]
Nishimura, T. [1 ]
Toriumi, A. [1 ]
机构：
[1] Univ Tokyo, Dept Mat Engn, Bunkyo Ku, Tokyo 1138656, Japan
来源：
SILICON COMPATIBLE MATERIALS, PROCESSES, AND TECHNOLOGIES FOR ADVANCED INTEGRATED CIRCUITS AND EMERGING APPLICATIONS 4 | 2014年 / 61卷 / 03期
关键词：
D O I：
10.1149/06103.0075ecst
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
We demonstrate a considerable suppression of the low-field leakage through a Y2O3 topgate insulator on graphene by applying high-pressure O-2 at 100 atm during post-deposition annealing. Then, two kinds of issues, band gap opening and inter-band scattering at high carrier density, are discussed through the density of states of bilayer graphene estimated by the quantum capacitance measurement.
引用
收藏
页码：75 / 80
页数：6
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