Structural and Electronic Properties of Epitaxial Graphene on SiC (0001)

被引：2

作者：

Riedl, C. ^{[1
]}

Starke, U. ^{[1
]}

机构：

[1] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany

来源：

SILICON CARBIDE AND RELATED MATERIALS 2008 | 2009年 / 615-617卷

关键词：

surface; graphene; epitaxial graphene; Low Energy Electron Diffraction; Angle Resolved Ultraviolet Photoelectron Spectroscopy; 4H-SiC; 6H-SiC; STACKING;

D O I：

10.4028/www.scientific.net/MSF.615-617.219

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The structural and electronic properties of epitaxial graplicne on SiC(0001) are investigated by low energy electron diffraction (LEED) and angle resolved ultraviolet photoelectron spectroscopy (ARUPS). Fingerprints in the spot intensity spectra in LEED allow for the exact determination Of the number of layers for the First three graplicne layers after being correlated with the electronic bandstructure obtained from ARUPS using He 11 excitation. Our analysis includes the consideration of samples with different doping levels. A possible influence of the polytype 4H- or 6H-SiC is discussed. LEED by itself turns out to be ail easy and practical method for the thickness analysis of epitaxial graphene on SiC(0001).

引用

页码：219 / 222

页数：4

共 14 条

[1] Electronic confinement and coherence in patterned epitaxial graphene [J].

Berger, Claire ;

Song, Zhimin ;

Li, Xuebin ;

Wu, Xiaosong ;

Brown, Nate ;

Naud, Cecile ;

Mayou, Didier ;

Li, Tianbo ;

Hass, Joanna ;

Marchenkov, Atexei N. ;

Conrad, Edward H. ;

First, Phillip N. ;

de Heer, Wait A. .

SCIENCE, 2006, 312 (5777) :1191-1196

[2] Microscopic thickness determination of thin graphite films formed on SiC from quantized oscillation in reflectivity of low-energy electrons [J].

Hibino, H. ;

Kageshima, H. ;

Maeda, F. ;

Nagase, M. ;

Kobayashi, Y. ;

Yamaguchi, H. .

PHYSICAL REVIEW B, 2008, 77 (07)

[3] Electric field effect in atomically thin carbon films [J].

Novoselov, KS ;

Geim, AK ;

Morozov, SV ;

Jiang, D ;

Zhang, Y ;

Dubonos, SV ;

Grigorieva, IV ;

Firsov, AA .

SCIENCE, 2004, 306 (5696) :666-669

[4] Morphology of graphene thin film growth on SiC(0001) [J].

Ohta, Taisuke ;

El Gabaly, Farid ;

Bostwick, Aaron ;

McChesney, Jessica L. ;

Emtsev, Konstantin V. ;

Schmid, Andreas K. ;

Seyller, Thomas ;

Horn, Karsten ;

Rotenberg, Eli .

NEW JOURNAL OF PHYSICS, 2008, 10

[5] Controlling the electronic structure of bilayer graphene [J].

Advanced Light Source, Lawrence Berkeley National Laboratory, One Cyclotron Road, Berkeley, CA 94720, United States ;

不详 ;

不详 .

Science, 2006, 5789 (951-954) :951-954

[6] Structural properties of the graphene-SiC(0001) interface as a key for the preparation of homogeneous large-terrace graphene surfaces [J].

Riedl, C. ;

Starke, U. ;

Bernhardt, J. ;

Franke, M. ;

Heinz, K. .

PHYSICAL REVIEW B, 2007, 76 (24)

[7] Precise in situ thickness analysis of epitaxial graphene layers on SiC(0001) using low-energy electron diffraction and angle resolved ultraviolet photoelectron spectroscopy [J].

Riedl, C. ;

Zakharov, A. A. ;

Starke, U. .

APPLIED PHYSICS LETTERS, 2008, 93 (03)

[8] Structure and morphology of 4H-SiC wafer surfaces after H2-Etching [J].

Soubatch, S ;

Saddow, SE ;

Rao, SP ;

Lee, WY ;

Konuma, M ;

Starke, U .

SILICON CARBIDE AND RELATED MATERIALS 2004, 2005, 483 :761-764

[9] Stacking transformation from hexagonal to cubic SiC induced by surface reconstruction: A seed for heterostructure growth [J].

Starke, U ;

Schardt, J ;

Bernhardt, J ;

Franke, M ;

Heinz, K .

PHYSICAL REVIEW LETTERS, 1999, 82 (10) :2107-2110

[10] Tailoring the SiC subsurface stacking by the chemical potential [J].

Starke, U ;

Bernhardt, J ;

Schardt, J ;

Seubert, A ;

Heinz, K .

SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2, 2004, 457-460 :415-418

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