Effect of gas pressure on hydrogenated amorphous silicon carbide films by hot-wire CVD

被引：0
|
作者：
Tabata, A [1 ]
Nakajima, T [1 ]
Mizutani, T [1 ]
Suzuoki, Y [1 ]
机构：
[1] Nagoya Univ, Dept Elect Engn, Chikusa Ku, Nagoya, Aichi 4648603, Japan
来源：
PROCEEDINGS OF 3RD WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION, VOLS A-C | 2003年
关键词：
D O I：
暂无
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
Hydrogenated amorphous silicon carbide (a-Si1-xCx:H) films were prepared by hot-wire chemical vapor deposition (CVD) using methane as a carbon source at a low tungsten temperature of 1400 degreesC, and the effect of gas pressure on the film properties and structure was investigated. The infrared absorption spectra revealed that Si-C bonds increased with increasing gas pressure from I to 4 Torr. Consequently, the optical band gap increased from 1.8 to 2.2 eV. The deposition rate was 1.2 nms(-1) at 4 Torr and higher than that in plasma-enhanced CVD deposition by about one order of magnitude. It was found that a-Si1-xCx:H films with an optical band gap over 2.0 eV could be easily prepared by control of gas pressure even at a low tungsten temperature of 1400 degreesC and at a higher deposition rate.
引用
收藏
页码：1703 / 1705
页数：3
相关论文
共 50 条
  • [11] Mechanisms influencing ''hot-wire'' deposition of hydrogenated amorphous silicon
    Molenbroek, EC
    Mahan, AH
    Gallagher, A
    JOURNAL OF APPLIED PHYSICS, 1997, 82 (04) : 1909 - 1917
  • [12] Deposition of device quality amorphous silicon by hot-wire CVD
    Feenstra, KF
    Van der Werf, CHM
    Molenbroek, EC
    Schropp, REI
    AMORPHOUS AND MICROCRYSTALLINE SILICON TECHNOLOGY - 1997, 1997, 467 : 645 - 650
  • [13] Thin silicon films ranging from amorphous to nanocrystalline obtained by hot-wire CVD
    Soler, D
    Fonrodona, M
    Voz, C
    Bertomeu, J
    Andreu, J
    THIN SOLID FILMS, 2001, 383 (1-2) : 189 - 191
  • [14] Amorphous to microcrystalline transition in thickness-graded hot-wire CVD silicon films
    Wang, Q
    Perkins, J
    Moutinho, H
    To, B
    Branz, HM
    AMORPHOUS AND HETEROGENEOUS SILICON-BASED FILMS-2002, 2002, 715 : 141 - 146
  • [15] Electronic states and the light-induced metastability in hydrogenated amorphous silicon prepared by hot-wire CVD
    Han, DX
    Yue, GZ
    Habuchi, H
    Iwaniczko, E
    Wang, Q
    THIN SOLID FILMS, 2001, 395 (1-2) : 134 - 137
  • [16] Microstructure and electronic properties of microcrystalline silicon carbide thin films prepared by hot-wire CVD
    Chen, T.
    Koehler, F.
    Heidt, A.
    Huang, Y.
    Finger, F.
    Carius, R.
    THIN SOLID FILMS, 2011, 519 (14) : 4511 - 4515
  • [17] Silicon Films for Heterojunction Solar Cells by Hot-Wire CVD
    Justianto, Madeleine
    Harig, Tino
    Hoefer, Markus
    Sittinger, Volker
    9TH INTERNATIONAL CONFERENCE ON CRYSTALLINE SILICON PHOTOVOLTAICS (SILICONPV 2019), 2019, 2147
  • [18] Aluminum-doped hydrogenated microcrystalline cubic silicon carbide films deposited by hot wire CVD
    Miyajima, S
    Yamada, A
    Konagai, M
    THIN SOLID FILMS, 2006, 501 (1-2) : 186 - 189
  • [19] Hydrogenated Nanocrystalline Silicon Thin Films Prepared by Hot-Wire Method with Varied Process Pressure
    Waman, V. S.
    Funde, A. M.
    Kamble, M. M.
    Pramod, M. R.
    Hawaldar, R. R.
    Amalnerkar, D. P.
    Sathe, V. G.
    Gosavi, S. W.
    Jadkar, S. R.
    JOURNAL OF NANOTECHNOLOGY, 2011, 2011
  • [20] Effect of Chamber Pressure on Red Emission from Silicon thin films Deposited by means of Hot-Wire CVD
    Dutt, A.
    Matsumoto, Y.
    Ortega, M.
    Sanchez, V.
    Olvera, M. L.
    2015 12TH INTERNATIONAL CONFERENCE ON ELECTRICAL ENGINEERING, COMPUTING SCIENCE AND AUTOMATIC CONTROL (CCE 2015), 2015,
12345