Effect of gas pressure on hydrogenated amorphous silicon carbide films by hot-wire CVD

被引：0

作者：

Tabata, A ^{[1
]}

Nakajima, T ^{[1
]}

Mizutani, T ^{[1
]}

Suzuoki, Y ^{[1
]}

机构：

[1] Nagoya Univ, Dept Elect Engn, Chikusa Ku, Nagoya, Aichi 4648603, Japan

来源：

PROCEEDINGS OF 3RD WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION, VOLS A-C | 2003年

关键词：

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Hydrogenated amorphous silicon carbide (a-Si1-xCx:H) films were prepared by hot-wire chemical vapor deposition (CVD) using methane as a carbon source at a low tungsten temperature of 1400 degreesC, and the effect of gas pressure on the film properties and structure was investigated. The infrared absorption spectra revealed that Si-C bonds increased with increasing gas pressure from I to 4 Torr. Consequently, the optical band gap increased from 1.8 to 2.2 eV. The deposition rate was 1.2 nms(-1) at 4 Torr and higher than that in plasma-enhanced CVD deposition by about one order of magnitude. It was found that a-Si1-xCx:H films with an optical band gap over 2.0 eV could be easily prepared by control of gas pressure even at a low tungsten temperature of 1400 degreesC and at a higher deposition rate.

引用

页码：1703 / 1705

页数：3

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