Polishing-pad-free electrochemical mechanical polishing of single-crystalline SiC surfaces using polyurethane-CeO2 core-shell particles

被引:89
作者
Murata, Junji [1 ]
Yodogawa, Koushi [1 ]
Ban, Kazuma [1 ]
机构
[1] Kindai Univ, Dept Mech Engn, 3-4-1 Kowakae, Higashiosaka, Osaka 5778502, Japan
关键词
Silicon carbide; Core-shell particles; Polishing; Electrochemical mechanical polishing; Electrochemical process; REMOVAL RATE; PERFORMANCE; ABRASIVES; WEAR; CMP; SILICON; COPPER; CEO2; SIZE;
D O I
10.1016/j.ijmachtools.2016.11.007
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A novel method for electrochemical mechanical polishing (ECMP) of the single-crystalline SiC surface, which has extremely high mechanical and chemical strength compared to conventional electronic materials, is reported. The method does not employ a polishing pad; it comprises electrochemical oxidization of the SiC surface and subsequent removal of the oxide by CeO2 from the polyuretharie-CeO2 core-shell particles. The core-shell particles are used to maintain a gap between the polishing plate (cathode) and the SiC wafer (anode), which enables efficient anodic oxidation of the inert SiC surface. The core-shell particles, composed of the elastic polyurethane core covered with an abrasive layer of small and soft CeO2 particles prepared by a simple and low-cost process, can be used to obtain a smooth SiC surface without using a polishing pad. The ratio of polyurethane to CeO2 in the core-shell particles is optimized to obtain core particles that are fully Covered with the shell particles without leaving excess CeO2 particles. Using the fabricated core-shell particles, the conventional CMP process is unable to remove the SiC surface without anodization. While a continuous bias during polishing produces a rough SiC surface owing to the oxide film remaining on the treated surface, as confirmed by current measurements and X-ray analysis, a periodically applied bias, whose conditions were determined by the theoretical growth rate and residual thickness of the oxide film, reduces the number of scratches, and a smooth surface with sub-nanometer roughness is obtained. The obtained value of surface roughness is in good agreement with the calculated value determined using conventional grinding theory. Compared to a conventional polishing process with a colloidal SiO2 slurry, the proposed method shows superior polishing efficiency without the need for a polishing pad. SEM observation of the core-shell particles shows that the particles have durability against the strong electric field between the electrodes.
引用
收藏
页码:1 / 7
页数:7
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