Channels That Heat Up

被引:25
作者
Koch, Tobias [1 ]
Lapidoth, Amos [1 ]
Sotiriadis, Paul P. [2 ]
机构
[1] ETH, Dept Informat Technol & Elect Engn, CH-8092 Zurich, Switzerland
[2] Johns Hopkins Univ, Dept Elect & Comp Engn, Baltimore, MD 21218 USA
关键词
Capacity per unit cost; channel capacity; channels with memory; high signal-to-noise ratio (SNR); on-chip communication; FADING CHANNELS; CAPACITY;
D O I
10.1109/TIT.2009.2023753
中图分类号
TP [自动化技术、计算机技术];
学科分类号
0812 ;
摘要
This paper considers an additive noise channel where the time-k noise variance is a weighted sum of the squared magnitudes of the previous channel inputs plus a constant. This channel model accounts for the dependence of the intrinsic thermal noise on the data due to the heat dissipation associated with the transmission of data in electronic circuits: the data determine the transmitted signal, which in turn heats up the circuit and thus influences the power of the thermal noise. The capacity of this channel (both with and without feedback) is studied at low transmit powers and at high transmit powers. At low transmit powers, the slope of the capacity-versus-power curve at zero is computed and it is shown that the heating-up effect is beneficial. At high transmit powers, conditions are determined under which the capacity is bounded, i.e., under which the capacity does not grow to infinity as the allowed average power tends to infinity.
引用
收藏
页码:3594 / 3612
页数:19
相关论文
共 24 条
[1]  
Akgul BES, 2006, IFIP VLSI-SOC 2006: IFIP WG 10.5 INTERNATIONAL CONFERENCE ON VERY LARGE SCALE INTEGRATION & SYSTEM-ON-CHIP, P1
[2]  
[Anonymous], 1983, Cambridge Studies in Advanced Mathematics
[3]  
[Anonymous], 2007, NANO MOL ELECT HDB
[4]  
[Anonymous], 1991, ELEMENTS INFORM THEO
[5]   Capacity results for block-stationary Gaussian fading channels with a peak power constraint [J].
Chen, Jun ;
Veeravalli, Venugopal V. .
IEEE TRANSACTIONS ON INFORMATION THEORY, 2007, 53 (12) :4498-4520
[6]   Interconnect limits on gigascale integration (GSI) in the 21st century [J].
Davis, JA ;
Venkatesan, R ;
Kaloyeros, A ;
Beylansky, M ;
Souri, SJ ;
Banerjee, K ;
Saraswat, KC ;
Rahman, A ;
Reif, R ;
Meindl, JD .
PROCEEDINGS OF THE IEEE, 2001, 89 (03) :305-324
[7]   MOS transistor modeling for RF IC design [J].
Enz, CC ;
Cheng, YH .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2000, 35 (02) :186-201
[8]  
Gallager R. G., 1968, Information Theory and Reliable Communication, V588
[9]  
GOODSON KE, 1999, MECH ENG HDB SERIES
[10]  
KISH LB, 2002, PHYS LETT A DEC, P144