Improvement of Dielectric Properties on Deposited SiO2 Caused by Stress Relaxation with Thermal Annealing

被引：12

作者：

Sometani, Mitsuru ^{[1
]}

Hasunuma, Ryu ^{[1
,2
]}

Ogino, Masaaki ^{[3
]}

Kuribayashi, Hitoshi ^{[3
]}

Sugahara, Yoshiyuki ^{[3
]}

Yamabe, Kikuo ^{[1
,2
]}

机构：

[1] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan

[2] Univ Tsukuba, Tsukuba Res Ctr Interdisciplinary Mat Sci TIMS, Tsukuba, Ibaraki 3058573, Japan

[3] Fuji Elect Device Technol Co Ltd, Elect Device Lab, Semicond Proc R&D Dept, Semicond Proc R&D Sect, Nagano 3900821, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2009年 / 48卷 / 05期

关键词：

CHEMICAL-VAPOR-DEPOSITION; ATMOSPHERIC-PRESSURE; TETRAETHYLORTHOSILICATE; SIO2-FILMS; SPECTRA; SILICON;

D O I：

10.1143/JJAP.48.05DB03

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The relationship between the electrical and structural characteristics of tetraethylorthosilicate (TEOS) SiO2 has been investigated to reveal the mechanism of the improvement of the dielectric properties with thermal annealing. Stress relaxation in TEOS-SiO2 caused by thermal annealing was observed as a blue shift of the infrared absorption spectral peak in a Fourier transform infrared attenuated total reflection (FTIR-ATR) spectrum. It was concluded that the stress relaxation increased the band gap of TEOS-SiO2, resulting in suppression of the leakage current. Additionally, thermal desorption spectroscopy (TDS) performed to investigate the phenomena of film densification by thermal annealing. (C) 2009 The Japan Society of Applied Physics

引用

页码：05DB031 / 05DB034

页数：4

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