Picosecond real-space imaging of electron spin diffusion in GaAs

被引：11

作者：

Henn, T. ^{[1
]}

Kiessling, T. ^{[1
]}

Ossau, W. ^{[1
]}

Molenkamp, L. W. ^{[1
]}

Reuter, D. ^{[2
]}

Wieck, A. D. ^{[2
]}

机构：

[1] Univ Wurzburg, Phys Inst EP3, D-97074 Wurzburg, Germany

[2] Ruhr Univ Bochum, Inst Angew Festkorperphys, D-44780 Bochum, Germany

来源：

PHYSICAL REVIEW B | 2013年 / 88卷 / 19期

关键词：

SUPERCONTINUUM GENERATION; PHOTOEXCITED CARRIERS; HOT-ELECTRONS; SEMICONDUCTORS; TRANSPORT;

D O I：

10.1103/PhysRevB.88.195202

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We use time-resolved two-color Kerr microscopy to study low-temperature electron spin diffusion in bulk GaAs with high spatial and temporal resolution. This method enables direct real-space imaging of the advancing spread of an optically excited electron spin packet by spin diffusion. We observe a high initial expansion rate of the spin packet, which is strongly reduced with increasing time. Comparison with continuous-wave Kerr spectroscopy demonstrates that this decrease is caused by the influence of the transient cooling of hot photocarriers on the electron spin diffusion coefficient.

引用

页数：7

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