High-performance TFTs with Si nanowire channels enhanced by metal-induced lateral crystallization

被引：26

作者：

Su, C. -J. ^{[1
]}

Lin, H. -C. ^{[1
]}

Huang, T. -Y ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2006年 / 27卷 / 07期

关键词：

metal-induced lateral crystallization (MILC); nanowires (NWs); thin-film transistors (TFTs);

D O I：

10.1109/LED.2006.877708

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Thin-film transistors with poly-Si nanowire (NW) channels enhanced by metal-induced lateral crystallization (MILC) are reported. The new device features a side-gate with self-aligned NW channels abutting the sidewalls of the gate structure. By adopting the MILC technique, the crystallinity of the NW channels is greatly enhanced, compared to those formed by solid-phase crystallization. As a result, the electrical performance of the devices could be significantly enhanced in terms of reduced subthreshold swing and threshold voltage as well as improved field-effect mobility.

引用

页码：582 / 584

页数：3

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