High-performance TFTs with Si nanowire channels enhanced by metal-induced lateral crystallization

被引：26
|
作者：
Su, C. -J. [1 ]
Lin, H. -C. [1 ]
Huang, T. -Y [1 ]
机构：
[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan
来源：
IEEE ELECTRON DEVICE LETTERS | 2006年 / 27卷 / 07期
关键词：
metal-induced lateral crystallization (MILC); nanowires (NWs); thin-film transistors (TFTs);
D O I：
10.1109/LED.2006.877708
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Thin-film transistors with poly-Si nanowire (NW) channels enhanced by metal-induced lateral crystallization (MILC) are reported. The new device features a side-gate with self-aligned NW channels abutting the sidewalls of the gate structure. By adopting the MILC technique, the crystallinity of the NW channels is greatly enhanced, compared to those formed by solid-phase crystallization. As a result, the electrical performance of the devices could be significantly enhanced in terms of reduced subthreshold swing and threshold voltage as well as improved field-effect mobility.
引用
收藏
页码：582 / 584
页数：3
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