The Si surface yield as a calibration standard for RBS

被引:28
作者
Bianconi, M
Abel, F
Banks, JC
Font, AC
Cohen, C
Doyle, BL
Lotti, R
Lulli, G
Nipoti, R
Vickridge, I
Walsh, D
Wendler, E
机构
[1] CNR, Ist Lamel, I-40129 Bologna, Italy
[2] GPS, Paris, France
[3] Sandia Natl Labs, Albuquerque, NM 87185 USA
[4] Univ Autonoma Madrid, E-28049 Madrid, Spain
[5] Univ Jena, Inst Festkorperphys, D-6900 Jena, Germany
关键词
Rutherford backscattering spectrometry; calibration standards; stopping power; silicon;
D O I
10.1016/S0168-583X(99)00927-1
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
The Rutherford backscattering spectroscopy (RBS) surface height of a pure bulk material can be used as an absolute standard Value to calibrate the detector solid angle. This work presents the results of an international collaboration started at the beginning of 1998 to define the surface height of the RES spectrum (H-0) of Si, amorphized by ion implantation to avoid channeling. The analyses were performed with 1-3 MeV He beams and 170 degrees scattering angle. The detector solid angle was estimated in the different laboratories either by geometrical measurement or by a calibrated standard. The agreement of the experimental Ho Values is of the order +/-2%, the claimed accuracy for RES. The results are also consistent at 2% level with both the stopping power measurements of Konac et al. (1998), and the measurements of Lennard et al. (1999). (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:293 / 296
页数:4
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