Properties of ITO films deposited by RF superimposed DC magnetron sputtering

被引：13

作者：

Kim, Se Il ^{[1
]}

Cho, Sang Hyun ^{[1
]}

Choi, Sung Ryong ^{[2
,3
]}

Yoon, Han Ho ^{[2
]}

Song, Pung Keun ^{[1
]}

机构：

[1] Pusan Natl Univ, Dept Mat Sci & Engn, Pusan 609735, South Korea

[2] Samsung Corning Precis Glass Co Ltd, Digital Informat Mat Div, Gumi Si 730735, Gyeongsangbuk D, South Korea

[3] Pusan Natl Univ, Natl Core Res Ctr Hybrid Mat Solut Mat, Pusan 609735, South Korea

来源：

CURRENT APPLIED PHYSICS | 2009年 / 9卷

关键词：

Magnetron sputtering; Transparent conductive oxide; Indium tin oxide; Electrical and structural properties; DOPED-INDIUM-OXIDE; ROOM-TEMPERATURE; ZINC-OXIDE; THIN-FILMS; TRANSPARENT; NANOPARTICLES; STRESS;

D O I：

10.1016/j.cap.2009.01.031

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

ITO films were deposited using a RF superimposed DC magnetron sputtering system with an ITO (90.0 wt% In2O3 and 10.0 wt% SnO2) single ceramic target at either room temperature or the crystallization temperature of ITO films (170 degrees C). The total sputtering power (DC + RF) was maintained at 70 W, and the RE portion of the total power was varied from 0% to 100%. The discharge voltage and deposition rate decreased with increasing RF portion of the total power. The (222) X-ray diffraction peak showed the highest intensity at a RF/(RF + DC) power ratio of 50% with a total power of 70 W. The ITO film deposited at a RF/(RF + DC) power ratio of 50% at 170 degrees C showed relatively low resistivity (2.52 x 10(-4) Omega cm). (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：S262 / S265

页数：4

共 18 条

[1] Effect of laser irradiation on the properties of indium tin oxide films deposited at room temperature by pulsed laser deposition [J].