Escape probability of O is photoelectrons leaving copper oxide

被引：21

作者：

Hucek, S

Zemek, J

Jablonski, A

机构：

[1] ACAD SCI CZECH REPUBL,INST PHYS,CR-16200 PRAGUE 6,CZECH REPUBLIC

[2] POLISH ACAD SCI,INST PHYS CHEM,PL-01224 WARSAW,POLAND

来源：

JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA | 1997年 / 85卷 / 03期

关键词：

escape probability of photoelectrons; depth distribution function; mean escape depth; overlayer method; CuO;

D O I：

10.1016/S0368-2048(97)00070-4

中图分类号：

O433 [光谱学];

学科分类号：

0703 ; 070302 ;

摘要：

The escape probability of O 1s photoelectrons as a function of depth of origin in CuO has been studied experimentally and by the Monte Carlo technique. It has been proved experimentally that the escape probability in the direction of X-ray propagation is no longer described by a simple exponential law but is a complex function with a maximum at a depth of 4-10 Angstrom. The mean escape depth is derived from the experimental data and is compared with the results of theory; satisfactory agreement is obtained. (C) 1997 Elsevier Science B.V.

引用

页码：257 / 262

页数：6

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