Investigating the Linearity of MOSFET-only Switched-capacitor ΔΣ Modulators Under Low-voltage Condition

被引：2

作者：

Parsan, Farhad Alibeygi ^{[1
]}

Ayatollahi, Ahmad ^{[1
]}

Abrishamifar, Adib ^{[1
]}

机构：

[1] IUST, Dept Elect Engn, Tehran, Iran

来源：

PROCEEDINGS OF THE 2009 IEEE SYMPOSIUM ON DESIGN AND DIAGNOSTICS OF ELECTRONIC CIRCUITS AND SYSTEMS | 2009年

关键词：

MOS capacitor; MOSFET-only; Delta Sigma modulator; DIGITAL CMOS TECHNOLOGY; CIRCUITS; DESIGN;

D O I：

10.1109/DDECS.2009.5012089

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Effect of asymmetric operating condition of depiction-mode MOS capacitors on the linearity of MOSFET-only switched-capacitor Delta Sigma modulators is investigated. In very low-voltage switched-capacitor circuits the opamp input and output common-mode levels are separated to provide maximum overdrive voltage for MOS switches. This causes an asymmetric voltage drop on capacitors during operation. On the other hand, the depiction-mode MOS capacitors are most linear when operated under a symmetric condition. The effect of this increased nonlincarity on a Delta Sigma modulator which is operated under an asymmetric condition is simulated and the results are compared with a Delta Sigma modulator which is operated under a symmetric condition.

引用

页码：12 / 15

页数：4

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