IGZO-TFT technology for large-screen 8K display

被引：98

作者：

Hara, Yoshihito ^{[1
]}

Kikuchi, Tetsuo ^{[1
]}

Kitagawa, Hideki ^{[1
]}

Morinaga, Junichi ^{[1
]}

Ohgami, Hiroyuki ^{[1
]}

Imai, Hajime ^{[1
]}

Daitoh, Tohru ^{[1
]}

Matsuo, Takuya ^{[1
]}

机构：

[1] Sharp Co Ltd, Taki, Mie, Japan

来源：

JOURNAL OF THE SOCIETY FOR INFORMATION DISPLAY | 2018年 / 26卷 / 03期

关键词：

IGZO; Oxide TFT; large-screen; 8K; high resolution; low resistance; 120Hz driving; single data-line structure;

D O I：

10.1002/jsid.648

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We succeeded in G8 factory for mass production of Indium-Gallium-Zink-Oxide thin-film transistor (IGZO-TFT) for the first time in the world. The initial TFT process was an etching stop-type TFT, but now, we are mass producing channel etching-type TFTs. And, its application range is smartphones, tablets, PCs, monitors, TV, and so on. In particular, because of recent demands for high-resolution and narrow frame, our IGZO display has been advanced in technology development with gate driver in panel. In this paper, we report development combining low resistance technology and the latest IGZO-TFT (IGZO5) for large-screen 8K display.

引用

页码：169 / 177

页数：9

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