Band alignments of different buffer layers (CdS, Zn(O,S), and In2S3) on Cu2ZnSnS4

被引:161
作者
Yan, Chang [1 ]
Liu, Fangyang [1 ]
Song, Ning [1 ]
Ng, Boon K. [2 ]
Stride, John A. [2 ]
Tadich, Anton [3 ]
Hao, Xiaojing [1 ]
机构
[1] Univ New S Wales, Sch Photovolta & Renewable Energy Engn, Australian Ctr Adv Photovolta, Sydney, NSW 2052, Australia
[2] Univ New S Wales, Sch Chem, Sydney, NSW 2052, Australia
[3] Australian Synchrotron, Melbourne, Vic 3168, Australia
基金
澳大利亚研究理事会;
关键词
SOLAR-CELLS; INTERFACE; PERFORMANCE; EFFICIENCY; OFFSET;
D O I
10.1063/1.4873715
中图分类号
O59 [应用物理学];
学科分类号
摘要
The heterojunctions of different n-type buffers, i.e., CdS, Zn(O,S), and In2S3 on p-type Cu2ZnSnS4 (CZTS) were investigated using X-ray Photoelectron Spectroscopy (XPS) and Near Edge X-ray Absorption Fine Structure (NEXAFS) Measurements. The band alignment of the heterojunctions formed between CZTS and the buffer materials was carefully measured. The XPS data were used to determine the Valence Band Offsets (VBO) of different buffer/CZTS heterojunctions. The Conduction Band Offset (CBO) was calculated indirectly by XPS data and directly measured by NEXAFS characterization. The CBO of the CdS/CZTS heterojunction was found to be cliff-like with CBOXPS = -0.24 +/- 0.10 eV and CBONEXAFS = -0.18 +/- 0.10 eV, whereas those of Zn(O,S) and In2S3 were found to be spike-like with CBOXPS = 0.92 +/- 0.10 eV and CBONEXAFS = 0.87 +/- 0.10 eV for Zn(O,S)/CZTS and CBOXPS = 0.41 +/- 0.10 eV for In2S3/CZTS, respectively. The CZTS photovoltaic device using the spike-like In2S3 buffer was found to yield a higher open circuit voltage (Voc) than that using the cliff-like CdS buffer. However, the CBO of In2S3/CZTS is slightly higher than the optimum level and thus acts to block the flow of light-generated electrons, significantly reducing the short circuit current (Jsc) and Fill Factor (FF) and thereby limiting the efficiency. Instead, the use of a hybrid buffer for optimization of band alignment is proposed. (C) 2014 AIP Publishing LLC.
引用
收藏
页数:4
相关论文
共 18 条
[1]  
[Anonymous], APPL PHYS LETT
[2]   Cliff-like conduction band offset and KCN-induced recombination barrier enhancement at the CdS/Cu2ZnSnS4 thin-film solar cell heterojunction [J].
Baer, M. ;
Schubert, B. -A. ;
Marsen, B. ;
Wilks, R. G. ;
Pookpanratana, S. ;
Blum, M. ;
Krause, S. ;
Unold, T. ;
Yang, W. ;
Weinhardt, L. ;
Heske, C. ;
Schock, H. -W. .
APPLIED PHYSICS LETTERS, 2011, 99 (22)
[3]   Impact of KCN etching on the chemical and electronic surface structure of Cu2ZnSnS4 thin-film solar cell absorbers [J].
Baer, M. ;
Schubert, B. -A. ;
Marsen, B. ;
Krause, S. ;
Pookpanratana, S. ;
Unold, T. ;
Weinhardt, L. ;
Heske, C. ;
Schock, H. -W. .
APPLIED PHYSICS LETTERS, 2011, 99 (15)
[4]   Electronic structure of Cu2ZnSnS4 probed by soft x-ray emission and absorption spectroscopy [J].
Baer, M. ;
Schubert, B. -A. ;
Marsen, B. ;
Schorr, S. ;
Wilks, R. G. ;
Weinhardt, L. ;
Pookpanratana, S. ;
Blum, M. ;
Krause, S. ;
Zhang, Y. ;
Yang, W. ;
Unold, T. ;
Heske, C. ;
Schock, H. -W. .
PHYSICAL REVIEW B, 2011, 84 (03)
[5]   The Current Performance of the Wide Range (90-2500eV) Soft X-ray Beamline at the Australian Synchrotron [J].
Cowie, B. C. C. ;
Tadich, A. ;
Thomsen, L. .
SRI 2009: THE 10TH INTERNATIONAL CONFERENCE ON SYNCHROTRON RADIATION INSTRUMENTATION, 2010, 1234 :307-310
[6]   Efficiency limitations for wide-band-gap chalcopyrite solar cells [J].
Gloeckler, M ;
Sites, JR .
THIN SOLID FILMS, 2005, 480 :241-245
[7]   Solar cell efficiency tables (version 43) [J].
Green, Martin A. ;
Emery, Keith ;
Hishikawa, Yoshihiro ;
Warta, Wilhelm ;
Dunlop, Ewan D. .
PROGRESS IN PHOTOVOLTAICS, 2014, 22 (01) :1-9
[8]   Band alignment at the Cu2ZnSn(SxSe1-x)4/CdS interface [J].
Haight, Richard ;
Barkhouse, Aaron ;
Gunawan, Oki ;
Shin, Byungha ;
Copel, Matt ;
Hopstaken, Marinus ;
Mitzi, David B. .
APPLIED PHYSICS LETTERS, 2011, 98 (25)
[9]   Band lineup between CdS and ultra high vacuum-cleaved CuInS2 single crystals [J].
Klein, A ;
Loher, T ;
Tomm, Y ;
Pettenkofer, C ;
Jaegermann, W .
APPLIED PHYSICS LETTERS, 1997, 70 (10) :1299-1301
[10]   PRECISE DETERMINATION OF THE VALENCE-BAND EDGE IN X-RAY PHOTOEMISSION SPECTRA - APPLICATION TO MEASUREMENT OF SEMICONDUCTOR INTERFACE POTENTIALS [J].
KRAUT, EA ;
GRANT, RW ;
WALDROP, JR ;
KOWALCZYK, SP .
PHYSICAL REVIEW LETTERS, 1980, 44 (24) :1620-1623