Formation and annealing of boron-oxygen defects in irradiated silicon and silicon-germanium n+-p structures

被引：11
|
作者：
Makarenko, L. F. [1 ]
Lastovskii, S. B. [2 ]
Korshunov, F. P. [2 ]
Moll, M. [3 ]
Pintilie, I. [4 ]
Abrosimov, N. V. [5 ]
机构：
[1] Belarusian State Univ, Minsk, BELARUS
[2] NAS, Sci Pract Mat Res Ctr, Minsk, BELARUS
[3] CERN, Geneva, Switzerland
[4] Natl Inst Mat Phys, Magurele, Romania
[5] Leibniz Inst Crystal Growth, Berlin, Germany
来源：
INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS 2013 | 2014年 / 1583卷
关键词：
boron-oxygen center; p type silicon; p type silicon-germanium; RADIATION-INDUCED DEFECTS;
D O I：
10.1063/1.4865618
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
New findings on the formation and annealing of interstitial boron-interstitial oxygen complex (BiOi) in p-type silicon are presented. Different types of n(+)-p structures irradiated with electrons and alpha-particles have been used for DLTS and MCTS studies. Electronic excitation essentially changes the formation rate of BiOi. It has been found that the increase of oxygen content slows the BiOi annealing rate down. The activation energy of the BiOi dissociation has been determined and it was found that germanium doping does not change the activation energy.
引用
收藏
页码：123 / 126
页数：4
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