Growth morphology and compositional analysis of InxGa1-xSb crystals-grown by vertical directional solidification technique

InxGa1-xSb (x = 0.5) single crystals of 12 mm diameter and 50-60 mm length have been grown from stoichiometric source materials by using vertical directional solidification technique. The optimized growth conditions are ampoule translation velocity 0.84 mu m/sec, rotation speed 10 rpm and ampoule with argon pressure (100 torr). The axial compositional profile has been determined by Vegard-law and showed mixing of the melt. Hall measurements reveal the conversion of n-type to p-type conduction along the growth axis and vice versa. Radial resistivity measurements by foul probe exhibited the nearly homogeneous growth. The growth morphology was attributed to the intrinsic crystallographic microstructures.