Capacitive energies of quantum dots with hydrogenic impurity

被引:25
作者
Lee, IH
Ahn, KH
Kim, YH
Martin, RM
Leburton, JP
机构
[1] Korea Inst Adv Study, Sch Phys, Dongdaemun Gu, Seoul 130012, South Korea
[2] Univ Illinois, Beckman Inst Adv Sci & Technol, Urbana, IL 61801 USA
[3] Max Planck Inst Phys Komplexe Syst, D-01187 Dresden, Germany
[4] Univ Illinois, Dept Phys, Urbana, IL 61801 USA
关键词
D O I
10.1103/PhysRevB.60.13720
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Using the spin density-functional theory, we calculated the electronic structure of quantum dots with a hydrogenic impurity. Changes in the spin-polarization changes and the capacitive energies are investigated as a function of impurity position and the number of electrons. We show that under certain conditions, a spin-blockade condition can be caused by the presence of an impurity.
引用
收藏
页码:13720 / 13726
页数:7
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